B21-P-05Characterization of InxGa1-xAs/InAs Coaxial Nanorod Grown on Graphene Layers by Catalyst-Free Molecular Beam Epitaxy

Abstract

One dimensional (1-D) semiconductor nanostructures are emerging as new candidates for the future electronic and optoelectronic devices due to their excellent physical properties, e.g. long lifetime and high efficiency, and various functionalities, e.g. flexibility and transparency [1,2]. Molecular beam epitaxy (MBE) provide accurate control over the various growth parameters, thereby allowing the growth of high-quality 1-D nanostructures with very clean and sharp interfaces [3]. Here, we grow InxGa1-xAs/InAs coaxial nanorod on graphene layers using catalyst-free MBE and investigate the chemical composition and crystal structure of nanorods using transmission electron microscope. Cross-sectional analysis shows that InxGa1-xAs coating layers have uniform thickness and cover the entire surface of the InAs core nanorods without any interfacial layers.