Abstract
B-site aliovalent modification of AgNbO3 with a nominal composition of Ag(Nb1-xMx)O3-x/2 (x = 0.01, M = Ti, Zr and Hf) was prepared. The effects of dopants on microstructure, dielectric, ferroelectric and conduction properties were investigated. The results indicate that the introduction of acceptor dopant does not lead to grain coarsening. Zr4+ and Hf4+ doping are beneficial to stabilize the antiferroelectric phase of AgNbO3. Among all the samples, Ti4+ doped AgNbO3 has the minimum resistivity while Hf4+ doped AgNbO3 has the maximum resistivity, therefore, Hf4+ doped AgNbO3 has high BDS. The XPS results indicate that the conduction behaviour is associated with the concentration of oxygen vacancies. This work hints that acceptor dopant is also effective on the microstructure control and chemical modification of AgNbO3-based ceramics.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
