B, N, S, Cl doped graphene quantum dots and their effects on gas-sensing properties of Ag-LaFeO3

Abstract

P-type Ag-LaFeO3 (AL) is a promising gas-sensing material owing to its large surface area, rich active oxygen lattice, good thermostability, controllable structure and strong reducibility. While the operating temperature of which is high. In this study, B, N, S and Cl doped graphene quantum dots (GQD) were prepared with a simple liquid-phase exfoliation method and with which decorated AL in order to low the operating temperature of AL. The sensors based on the doped GQD operated at room temperature and showed affinity toward different volatile organic compounds (VOCs). B-GQD revealed p-type semiconductor property and reduced the operating temperature of AL markedly form 90 °C to 55 °C when composite with it because of the synergy effect. Undoped GQD and N, S, Cl doped GQD showed n-type semiconductor property and oppositely increased the operating temperature of AL to different extent when composite with AL. That is, the more electrons in the outer layer of the doped element, the higher the temperature of GQD/AL composite rise. Thus the gas-sensing properties of B-GQD/AL composite was further researched, the results showed that the composite possessed high sensitivity, good selectivity, good stability and low operating temperature to low concentration of formaldehyde.