{B[C2H4Si(CH3)NH]2[C2H4Si(CH3)N(SiH2Ph)]}n: The First Polyborosilazane Precursor for Silicoboron Carbonitride Stable to 2200 °C

Zhi-Chang Wang,Ralf Riedel,Fritz Aldinger,Peter Gerstel,Joachim Bill,Horst Kummer,Gerhard Kaiser

doi:10.1246/cl.2001.296

{B[C2H4Si(CH3)NH]2[C2H4Si(CH3)N(SiH2Ph)]}n: The First Polyborosilazane Precursor for Silicoboron Carbonitride Stable to 2200 °C

Zhi-Chang Wang, Ralf Riedel + Show 5 more

https://doi.org/10.1246/cl.2001.296

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Journal: Chemistry Letters	Publication Date: Apr 1, 2001
Citations: 4

Affiliation: Universidad del Noreste, Technical University of Darmstadt, Max Planck Society, Max Planck Institute for Intelligent Systems

#Pyrolysis Of Precursor #Base-catalyzed Reaction + Show 4 more

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Abstract

Abstract {B[C2H4Si(CH3)NH]2[C2H4Si(CH3)N(SiH2Ph)]}n was synthesized by base-catalyzed dehydrocoupling reaction of {B[C2H4Si(CH3)NH]3}n with phenylsilane. Pyrolysis of the new polyborosilazane precursor to 1050 °C gave an amorphous material Si3.9B1.0C11N3.2, which could resist thermal degradation to 2200 °C in argon.

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