Abstract
The target materials used in this experiment include AZO(Al:ZnO) and Co52Fe20Zr8B20. The thin films are prepared by employing the method of DC-plasma co-deposition. By changing the power of deposition that varies the composition of the thin films, the thermal, structural, electrical and magnetic properties of these CoFeZrB thin films are scrutinized. According to the thermal analysis, the sample of A20C80 (19.73 at% of ZnO) has the highest activation energy of crystallization that is 515.14 (kJ/mole). The activation energy of crystallization decreases when the concentration of ZnO increases. The minimum activation energy of crystallization is reached when the concentration of ZnO is 46.68 at%. By keeping the deposition power of CoFeZrB but varying the deposition power of AZO, the samples show no evidence of obvious crystalline grains of ZnO. However, the crystalline grains of ZnO occurs when the annealing temperature is 545℃ (above Tx, but below Tp ). The grain size increases as the concentration of ZnO increases. By keeping the deposition power of AZO but varying the deposition power of CoFeZrB, the samples crystalize after annealing below the temperature of Tg no matter what the deposition power of CoFeZrB is. From the bright-field images of TEM, the grains are widely distributed and stabilized in the thin films, moreover,the grain size decreases as the concentration of ZnO decreases.
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