溅射功率对AZO透明导电薄膜的性能影响

Abstract

Al掺杂的ZnO薄膜(AZO)具有高电导率，可见光范围内的高透过率，已经成为一种逐渐兴起的光电薄膜材料，相比于传统的ITO薄膜，AZO薄膜具有原料储量丰富，价格低廉，无毒无害等优点，成为了替代ITO薄膜的首选材料。本文采用自制的AZO靶材，通过射频磁控溅射的方法制备的AZO薄膜，并利用四探针电阻测试仪、紫外–可见光分光光度计、XRD、SEM对薄膜的性能进行表征，研究了不同的溅射功率对薄膜形貌，结构以及光电性能的影响。结果表明：随着溅射功率从150 W至300 W逐步升高，薄膜的晶粒尺寸逐渐增大，结晶性能上升，电阻率下降，而可见光透过率则呈现先增大后减小趋势。 Al-doped ZnO (AZO) thin film not only has high electrical conductivity, but also high optical trans-parence in the visible region. AZO has become a kind of important optical-electronic materials. Comparing with ITO thin films, AZO films have abundant resources, low price and low pollution to the environment, so it is hopeful for AZO films to replace the ITO films in the future. In this article, AZO thin films were deposited by using R.F magnetron sputtering method and the AZO target was sintered in our laboratory. The films were characterized by four-point probes, ultraviolet-visible light spectrophotometer, XRD, SEM. The influence of sputtering power on the morphology, electrical and optical properties of AZO films was studied. The results showed that as the sputtering power increases, the crystalline dimension increases, the crystal properties improve, and the electrical conductivity as well as the light transmittance decrease.