Abstract
AZO/Ag/AZO transparent flexible electrodes were fabricated on mica substrates by magnetron sputtering at room temperature. Effect of Ag inserting layer thickness on the optical and electrical properties of AZO/Ag/AZO was investigated. The Haacke figure of merit (FOM) exhibited a maximum of 30.2 × 10−3 Ω−1 with 8 nm's Ag inner layer. It had low resistivity of 3.5 × 10−5 Ω cm, average transmittance values of 83.1% in the visible wavelength region. Moreover, thermal durability of AZO/Ag(8 nm)/AZO was evaluated by annealing in vacuum for 0.5 h at different temperature. The FOM can be enhanced while the sample was annealed below 350 ℃. The resistivity and transmittance are respectively 3.69 × 10−4 Ω cm and 87.0% even after high temperature annealing up to 750 ℃. In addition, there was no appreciable change in the sheet resistance of multilayers after a severe bending test. The results indicate that the flexible and withstanding high temperature AZO/Ag/AZO multilayer transparent electrodes grown on mica have potential application for the next-generation flexible optoelectronics.
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