Abstract
The optical properties of AZO thin films prepared by the RF mangnetron sputtering system was studied to research the dependance of chemical properties of substrate. The substrate was the SiOC film deposited by Inductively coupled plasma chemical vapor deposition with various gas flow rate of and Ar (DMDMOS). In accordance with the increase of Ar gas flow rates, the Si-O bond in the SiOC film increased and then progressed the amorphism. The roughness of AZO grown on SiOC film with high degree of amorphism decreased and then improved the flatness of surfaces. Moreover, the ultra violet emission with high intensity was spontaneously induced in the AZO film growed on SiOC film with high degree of amorphism.
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