Abstract
An effect of a high-voltage switching to the low-ohmic state in symmetric diode structures InGaAs(Cr)In at 77 °K is found. An injection ability of the In contacts at 77 °K in high electric fields is investigated by a method of optical quenching of the injection current. It is shown that the high voltage switching effect is not related to a double carrier injection from the In contacts. A mechanism of the effect is proposed involving the field-induced generation of carrier pairs in the structure base resulting from an impact ionization under the local breakdown with the base resistance modulation after the τp mechanism. The concentration dependence of τp is shown to be due to a change of the Cr level occupation. Under the avalanche switching the negative differential resistance region of the I–U characteristic shows an instability of the current on applied voltage and of the intensity of the emission at the band-to-band transition. [Russian Text Ignored].
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