Abstract
The avalanche robustness of 430 V SiC avalanche diodes at high temperatures is investigated. The UIS test was performed with fixed avalanche time in order to avoid the effect of a thermal diffusion time on an avalanche energy. It is found that the avalanche energies at 25 are 10.5 J/cm2 for and 12.7 J/cm2 for while those at 170 are 8.02 J/cm2 and 9.96 J/cm2, respectively. Their temperature coefficients are about-0.018 J/cm2K, which are much smaller than those of typical SiC-MOSFETs, indicating that the SiC diodes maintain great avalanche robustness even at high temperatures.
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