Abstract
An InGaAs/InP avalanche photodiode (APD) with a sectional InGaAsP/InP charge layer at the heterointerface between the InGaAs absorption and InP multiplication region has been designed, fabricated and tested. We demonstrate a new APD structure that utilizes the sectional 140nm thin charge layer and a 500nm thin multiplication layer. The band diagram, electrical field distribution and current–voltage (I–V) characteristics up to punch-through voltage have been simulated. The fabricated mesa structure photodiode shows responsivity 0.9A/W at 1310nm at 20V and avalanche gain up to 10 near breakdown voltage 36V. The measured results revealed that the sectional charge layer could be used for control of the electric field profile in the APD structure.
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