Abstract
Properties and peculiarities of avalanche multiplication in the p-i-n structures with the graded i-region are discussed. It is shown that the grading of the band gap of semiconductors in the high field region of infrared avalanche photoheterostructure governs the process of multiplication gain and improves noise characteristics of such photodiodes.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
