Avalanche dynamics in silicon avalanche single- and few-photon sensitive photodiode

Abstract

We are presenting the results of the study of the Single Photon Avalanche Diode (SPAD) avalanche pulse response rise-time and its dependence on several key parameters. We were investigating the unique properties of K14 type SPAD with its high delay uniformity of 200 μm active area, the character of avalanche, and the correlation between the avalanche build-up time and the photon number involved in the avalanche trigger. The detection chip was operated with bias higher then breakdown voltage, ie. in Geiger mode. The detection chip was operated in a passive quenching circuit with active gating. This set-up enabled us to monitor both the diode reverse current using an electrometer and a fast digitizing oscilloscope. The electrometer reading enabled to estimate the photon number per detection event, the avalanche build up was recorded on the oscilloscope and processed by custom designed waveform analysis package. The correlation of avalanche build up to the photon number, bias above break, photon absorption location, optical pulse length and photon energy was investigated in detail. The experimental results are presented.