Abstract
The avalanche buildup time of an avalanche photodiode can be determined from the frequency response of the noise power as a function of the dc multiplication M 0 . In this paper we report on the first measurements of the avalanche buildup time of InP/InGaAsP/ InGaAs avalanche photodiodes with separate absorption, grading, and multiplication regions (SAGM-APD's). Measurements on several different device structures reveal that the avalanche buildup time (gain-bandwidth product) decreases (increases) with increasing carrier concentration in the multiplication region. The shortest buildup time that we have observed was M_{0} \times 4.2 ps which corresponds to a gain-bandwidth Product of 38 GHz.
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