Abstract
Silicon-based single photon avalanche diodes (SPADs) are widely used as single photon detectors of visible and near infrared photons. There has, however, been a lack of models accurately interpreting the physics of impact ionization (the mechanism behind avalanche breakdown) for these devices. In this paper, we present a statistical simulation model for silicon SPADs that is capable of predicting breakdown probability, mean time to breakdown, and timing jitter. Our model inherently incorporates carriers’ dead space due to phonon scattering and allows for nonuniform electric fields. Model validation included avalanche gain, excess noise factor, breakdown voltage, breakdown probability, and timing statistics. Simulating an n-on-p and a p-on-n SPAD design using our model, we found that the n-on-p design offers significantly improved mean time to breakdown and timing jitter characteristics. For a breakdown probability of 0.5, mean time to breakdown and timing jitter from the n-on-p design were 3 and 4 times smaller compared to those from the p-on-n design. The data reported in this paper are available from the ORDA digital repository (DOI: 10.15131/shef.data.4823248).
Highlights
A GROWING number of optical-based applications are sending and/or detecting optical signals at the single photon level
To accurately describe the impact ionization process, the carriers’ history, including dead space, which is significant in submicron avalanche regions, must be included [12]
One cause of increased jitter is the absorption of photons at the edge of the single photon avalanche diodes (SPADs)’s active region, resulting in avalanche pulses with timing performance very different from those triggered by photon absorption in the central active region [14]
Summary
A GROWING number of optical-based applications are sending and/or detecting optical signals at the single photon level. The importance of Si-based SPADs gave rise to development of simulation models for Si SPADs. The key performance parameters investigated are (i) breakdown probability, Pb, which determines the detection efficiency of a SPAD, and (ii) timing jitter, usually defined as Full-Width at Half-Maximum (FWHM) of time to detect avalanche breakdown. To accurately describe the impact ionization process, the carriers’ history, including dead space, which is significant in submicron avalanche regions (common in Si-based SPADs with small timing jitter), must be included [12]. Mean time to breakdown, Tb, and timing jitter were simulated in a study that included dead space but used only constant electric fields [17] This was followed by a Si SPAD model by Ingargiola et al [18], which included the carriers’ dead space and tried to accommodate non-uniform electric fields. 3, 5, and 11 times the carrier’s transit time, respectively
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