Abstract
Current-controlled negative resistances have been observed in a variety of point-contact Ge diodes. Experiments were done at 300°K and 243°K, using both dc and pulsed currents. In these experiments both contacts are of the ohmic, non-injecting type. The effect has been seen in both n and p -type Ge single crystals having resistivities that range from 0.1 to 50 ohm-cm. The frequency of the relaxation oscillations resulting from the negative resistance has ranged from 1 KG to 10 MC depending on the cathode-anode spacing and the external capacitance used. Analysis shows that thermal effects can not explain these results. The negative resistance is believed to be due to the two carrier current flow (double injection) in the bulk material after avalanche injection has been produced at the point contact. This explanation for the negative resistance differs from those previously proposed and allows predictions of the I-V curve as well as frequency limitations. Experiments with different sized points, varying pul...
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
