Abstract
Abstract An attempt is made to investigate the contributions of the avalanche and drift layers of a millimetre wave p+nn+ InP IMPATT diode towards high frequency negative resistance for four biasing current densities by computer analysis of the negative resistance profiles in the depletion layer of the diode and the diode admittance characteristics. The results show that the contribution of the avalanche layer to the negative resistance increases while that of the drift layer decreases appreciably with an increase of current density from 8 × 108 Am−2 to 109 Am−2. The negative resistance profiles exhibit a maximum in the drift layer and a minimum in the avalanche layer, while the reactance profiles illustrate the opposite behaviour. In addition, the optimum frequency is a window frequency ( ≃ 221 GHz) at an operating current density of 6× 108 Am−2 for which the device Q-factor is 6-6. The millimetre wave device performance is found to improve for an increase of current density beyond 8× 108 Am−2.
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