Abstract
The effect of precursor vapor pressure on LiNbO 3 and LiTaO 3 film stoichiometry is compared for single and double alkoxides. Stoichiometric evaporation can be achieved in an appropriate temperature and pressure range according to the precursor sublimate composition analysis. The deposited LiTaO 3 films from LiTa(l-OC 4H 9) 6 were stoichiometric and epitaxial when a lattice-matched single-crystal substrate was used. The stoichiometry of the film was assessed by Rutherford backscattering and precision lattice parameter measurements. The high quality of the epitaxial layer was confirmed by high-resolution double- and triple-axes X-ray diffraction.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
