Automatic generation of shallow electrically active dopant profiles from spreading resistance measurements

Abstract

The calculation of the electrically active dopant profile from spreading resistance measurements requires not only the calculation of the sampling volume correction factor but also a deconvolution of the carrier spilling effects. A completely automatic Poisson-based correction package has been developed which performs this calculation–deconvolution within 1 min on a 486-based microcomputer and supports all the currently known contact models. The capabilities of the package will be demonstrated on an ultra-shallow opposite type implant, a narrow-base transistor and a submicron source-drain implant. Furthermore, a series of requirements is being proposed for the accurate correction of carrier spilling effects. The currently available Poisson contact models will be reviewed with respect to these requirements starting from secondary ion mass spectrometry measurements and an improved contact model involving the parallel circuit of an elastically deformed stress layer and a plastically deformed metallic phase layer will be proposed.