Abstract
A computer algorithm for automatic EPD-counting (etch-pit density) with an optical microscope is presented. Several dislocation etchants proposed in the literature to reveal structural defects on InP were employed and improved. Their reliability for automatic counting was proven. For a considerable number of samples exhibiting an EPD between 104 and 106 cm−2 it is shown that the automatically counted number of etch pits agrees with the visually determined value within less than ±30%. Using a modified H3PO4:HBr etchant good results for automatically determined EPDs beyond 107 cm−2 were obtained on InP layers epitaxially grown on Si substrates.
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