Automated Growth of Si1−xGex Single Crystals with Constant Axial Gradient by Czochralski Technique

Abstract

AbstractThis contribution presents the growth of Si1−xGex crystals with constant gradient of composition for X‐ray or γ‐ray diffraction optics using automated control of the crystal shape during the growth process. The key idea is to achieve a constant concentration gradient by continuously decreasing the crystal diameter during the main crystal growth phase. For this purpose a concept has been developed for a proper planning of the radius trajectory matching all technological requirements. Si1−xGex single crystals with constant gradients between 0.10 and 0.16 at% cm−1 have been grown using an automated control system.