Abstract
The production line will be used to fabricate 3-in.-diameter silicon solar cells using the elements of the manufacturing sequences identified previously as most likely to achieve the cost goal of $0.50/W. A plan for introducing and selecting variables was established including three major junction-formation techniques: ion implantation, gaseous (POCl/sub 3/), and spin-on diffusion sources. The testing and development of screen-printed metallization with evaporated Ti/Ag contacts used as a control is included. Organization of the facility was accomplished, including incoming wafer inspection, lot identification, and data logging; in addition, equipment assembly and check-out was completed. Twenty-two wafer lots (25 wafers/lot) were started with some lots devoted to initial calibration of equipment. A plan for modeling and analyzing solar cell performance is presented which is based on measured dark I-V characteristics and a computed value of light-generated current. A statistical approach is outlined for relating measured electrical performance with the manufacturing sequences. Panel design procedures are outlined in some detail starting with the problem of cell selection from an assumed Gaussian distribution of cell parameters. Further considerations of cell size in relation to packing factor and geometric, structural, and land usage factors are given.
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