Autoionization resonances in atomic Ga, In, and Pb

Abstract

Autoionization resonances of the type (n−1)d→np, wheren pertains to the outermost shell of Ga, In and Pb, were studied with the use of electron spectrometry in combination with synchrotron radiation. The relative strengths of the exit channels for the various resonance states were measured. In the case of Ga and In, a complete partitioning of the total absorption cross section into thes 2 1 S,sp 1 P, andsp 3 P components (exit channels) was achieved, and in the case of Pb the decay of the resonance states into the major exit channels 6s 2 6p 2 P 1/2, 6s 2 6p 2 P 3/2, 6s 6p 2 4 P 1/2, 6s 6p 2 2 D 3/2 and 6s 6p 2 2 P 1/2 was determined. In Ga, strong coupling was observed for those states of the 4p 2 manifold that have the same symmetries as the final ionic states, e.g. 4p 2 3 P→4s 4p 3 P and 4p 2 1 S→4s 2 1 S. In In, there is a similar, but weaker correlation, which also includes two-electron excitation channels. Comparison between Ga and In shows that thesp 3 P channel is much stronger in In (52% vs 40% in Ga) while thesp 1 P channel is correspondingly weaker (28% vs 37%), with thes 2 1 S channel remaining practically unchanged (20 vs 23%). In Pb, the 6s 2 6P 2 P 1/2 channel displays interference patterns due to a strong, competing direct transition, whereas the other channels do not, indicating population predominantly via the resonance states.