Abstract
Certain effects of uniaxial stress X(∥[100]) on the intrinsic linewidth of the ground state light-hole exciton (1L) and the exciton energies in GaAs bulk semiconductor have been investigated theoretically. The following experimental results have been interpreted: (1) when X ≈ 0.45 kbar, the level crossing between the 1L exciton and the first excited state of the heavy-hole exciton starts, and (2) when X⩾ 0.5 kbar, a Fano-like resonance (autoionization) occurs and causes a linewidth broadening of the 1L exciton line. The valence band was analyzed at the Brillouin zone center by solving perturbatively a 4×4 Luttinger-Kohn Hamiltonian in conjunction with a 4×4 strain Hamiltonian in the spin J = 3 2 basis. Reasonable comparison between theory and experiment was obtained.
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