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Abstract
High-resolution transmission electron microscopy (HRTEM) in conjunction with auto-correlation function (ACF) analysis was utilized to determine the structure of the amorphous TiSix layer formed in the initial stage prior to the formation of crystalline silicides. Enhanced formation of C54-TiSi2 on (001) Si by tensile stress and/or high-temperature sputtering was found. The present work strongly suggested that the presence of a high density of silicide crystallites in the amorphous TiSix layer leads to the favorable TiSi2 formation.
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