Abstract
An Aurivillius phase bismuth layer‐structured compound potassium bismuth titanate is synthesized using conventional solid‐state processing. It was found that the range of sintering temperature for the potassium bismuth titanate is very narrow. Phase analysis was performed by X‐ray diffraction, and microstructural morphology was assessed by scanning electron microscopy. The Curie temperature TC, piezoelectric coefficient d33, and mechanical quality factor Qm (kp mode) of the dense potassium bismuth titanate were found to be 555°C, 21.2 pC/N, and 1602, respectively. Dielectric spectroscopy showed that potassium bismuth titanate possesses stable high‐temperature dielectric properties.
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