Abstract
In this work, InGaN-based green light-emitting diodes (LEDs) are studied theoretically. We have minimized the problem of asymmetrical carrier distribution in the active region. We have sandwiched the active region between p-AlGaN layers and observed improvement in the device performance. The hole injection, as well as the distribution, is improved remarkably in all the QWs. The asymmetry between the concentrations of electrons and holes in the emission region is reduced in contrast to the conventional structure. The radiative recombination is also enhanced because all the QWs contribute greatly in radiative recombination.
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