Abstract
Negative differential resistance due to Auger suppression is demonstrated in CdHgTe diodes grown by molecular beam epitaxy (MBE) using silver as acceptor dopant. These devices require growth of relatively complicated heterostructures, and control of n- and p-type doping over a large range. For this reason, the use of silver as an acceptor in CdHgTe devices grown by MBE has been reexamined. The results show that the diffusion of silver at the growth temperature does not necessarily preclude the use of silver doping in devices. For concentrations up to high 1017 cm−3, silver appears to be fully electrically active.
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