Auger recombination rates in dilute-As GaNAs semiconductor

Chee-Keong Tan,Nelson Tansu

doi:10.1063/1.4921394

Abstract

The evaluation of Auger recombination process for dilute-As GaNAs alloy is presented. Our analysis indicates the suppression of interband Auger recombination mechanism in dilute-As GaNAs alloy in the green spectral regime. The interband Auger coefficient in dilute-As GaNAs alloy is shown as two orders of magnitude lower than that of its corresponding intraband Auger rate. Our results confirm that the second conduction band has a negligible effect on the interband Auger process in dilute-As GaNAs alloy due to the non-resonant condition of the process. Our findings show the importance of dilute-As GaNAs as an alternative visible material with low Auger recombination rates.

Highlights

The interband Auger recombination process has been suggested as a dominant mechanism leading to large Auger coefficient values in the InGaN alloy, which accounts for the efficiency droop phenomena in green light emitting diodes (LEDs).[23]
Our finding strongly indicates that the interband Auger rates are at least two orders of magnitude smaller than the corresponding intraband Auger rates for dilute-As GaNAs alloy
The maximum Auger recombination coefficient considering intraband and interband Auger recombination processes for dilute-As GaNAs alloy is found as C ∼ 1.66 x 10−32 cm6s−1, which is two orders of magnitude lower than that of InGaN alloy

Summary

INTRODUCTION

III-nitride semiconductor alloys have achieved significant progress in the past decade,[1,2,3,4,5,6,7,8,9,10,11,12,13] in which the key advances in III-Nitride based light emitting diodes (LEDs) were recently awarded by Nobel Prize in Physics in 2014.14 Despite the advances in the GaN-based LEDs, LEDs development is hindered by the efficiency-droop phenomena which results in significant reduction in internal quantum efficiency as the operating current density increases. Iveland and co-workers revealed a linear correlation between the emitted Auger electron and droop current in the InGaN LED, suggesting the existence and important role of Auger processes in leading to the efficiency droop in LEDs.[29] In particular, the interband Auger recombination process has been suggested as a dominant mechanism leading to large Auger coefficient values in the InGaN alloy, which accounts for the efficiency droop phenomena in green LEDs.[23] Previous study indicated the fundamental difficulties in suppressing the interband Auger recombination,[23] until our identification of dilute-As GaNAs material as a possible material with negligible interband Auger process.[30]. Our findings confirmed the suppression of interband Auger recombination by using dilute-As GaNAs alloy. The temperature dependency of the Auger coefficient for dilute-As GaNAs alloy is briefly discussed

THEORY AND CALCULATIONS

RESULTS AND DISCUSSIONS

CONCLUSIONS