Abstract
AbstractThe theory of Auger recombination via deep and shallow acceptors in p‐type AIIIBV semiconductors is investigated to determine the influence of free and localized carrier wave functions orthogonality. The extension of zero radius potential model to the case of several bands is used for the treatment of the deep acceptor wave function. The asymptotic wave function of the shallow acceptor for the range of the great wave vectors, and the scattering amplitude in the case of elastic scattering of the free carriers by a deep centre, are obtained, taking into account complex band structure. The results of the theory are applied to GaAs, and InGaAsP solid solutions. The rates of the various processes of Auger recombination are compared.
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