Auger recombination involving dislocations in semiconductors

Abstract

Auger capture of majority carriers by a charged edge dislocation in n-type semiconductorsis considered in the case of weak saturation of the dangling bonds existing on thedislocation core. The dependence of the capture radius on the depth of the one-dimensionaldislocation band and on temperature is obtained. Values of temperature and free electronconcentration are estimated when Auger capture is the dominant mechanism ofnonradiative recombination in crystals with dislocations.