Abstract
AbstractWe studied the Auger recombination in Si1‐xGex /Si quantum wells using near‐infrared photoluminescence (PL) spectroscopy. We found that the PL intensity under high‐density excitation depends strongly on the width of the single quantum wells and that the Auger recombination is more pronounced for wide wells. This indicates that the Auger recombination rate depends on the spatial profile of the hole wave function in the Si1‐xGex well layer. We discuss the method to control the nonradiative Auger recombination rate in coupled double quantum wells (CDQWs) by manipulating the wave functions; the rate is reduced by tuning the barrier width. In CDQWs voltage‐biased on the surface, the PL intensity decrease with surface voltage, but the electric field dependence of the PL intensity is complicated under low‐density‐excitation condition. This unique electric‐field dependence of the PL intensity is sensitive to the excitation intensity and the sample temperature. We tentatively attribute these PL behaviors to the appearance of the impact ionization under the low excitation intensity and high‐surface‐bias voltage conditions. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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