Abstract
AbstractAn AlN film was grown using ammonia plasma and characterized with Auger electron spectroscopy in depth profile mode using argon sputtering. After growth of AlN on a 6061 Al substrate in a plasma chamber, the sample was removed from the vacuum and transported to an ultrahigh vacuum surface analysis system. Detailed AES spectra of Al, O and N are presented as a function of sputtering time (depth). Relative concentration changes were observed for the KLL O and KLL N signals but there were no significant lineshape changes, however significant relative concentration and lineshape changes associated with the LVV Al signal were observed. Lineshape analysis indicates the presence of the following bonds: Al–O (56 eV), Al–N (59 eV) and Al–Al (68 eV). Copyright © 2003 John Wiley & Sons, Ltd.
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