Abstract
We consider the effect of reducing the density of final hole states for Auger processes on the Auger rate at room temperature and 77K at densities near lasing thresholds. The system of interest is a strain-compensated superlattice based on the InAs/GaInSb material system with a 3.7 microm band gap. At 77K the Auger lifetime is reduced by two orders of magnitude, while the change at 300K is less than a factor of two. We conclude that final-state optimization in this particular structure, while pronounced at 77K, has little effect at 300K.
Highlights
Final-state optimization, first applied to long-wavelength infrared detectors[11], works best at low density, when the nonequilibrium electrons and holes are closest to the band edges
Letter will be to evaluate the importance of final-state optimization for mid-infrared strained semiconductor superlattices at 77K and 300K and at the carrier densities required for gain at those temperatures
In order to examine final-state optimization we focus entirely on hole Auger
Summary
Carrier recombination in room-temperature high-quality semiconductors with band gaps in the mid-infrared and carrier densities sufficient for lasing is typically dominated by direct Auger processes. Final-state optimization, first applied to long-wavelength infrared detectors[11], works best at low density, when the nonequilibrium electrons and holes are closest to the band edges.
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