Auger line shape and electron energy loss spectroscopy analysis of amorphous, microcrystalline, and β‐SiC

Abstract

Auger electron spectroscopy (AES) line shape analysis of the Si‐L23VV and C‐KLL peaks has been performed in conjunction with electron energy loss spectroscopy (EELS) on Hg‐sensitized photodeposited amorphous and microcyrstalline SiC films. Mixtures of SiH4/CH3SiH3 and SiH4/(CH3)2SiH2 with helium or hydrogen dilution were used for the depositions. AES line shape and EELS analyses were also performed on β‐SiC for comparison. Quantitative bulk compositional analysis to determine the Si and C concentrations in these films was performed with an electron microprobe (EMPA) using x‐ray wavelength dispersive spectroscopy (WDS). AES and EELS results reveal the predominant Si–C bonding and relative crystallinity in the films as a function of deposition parameters, which includes the gas mixture, pressure, and H2/He dilution. These parameters determine the H radical flux during growth, which leads to changes in the film structure.