Abstract
Photoconductive lifetime measurements have been carried out on both undoped and Cu doped p-type Hg 0.885Zn 0.115Te material prepared by a modified quench-anneal technique. An analysis of lifetime vs doping variations suggests that the Auger recombination mechanism is dominant. The experimental determination of the overlap integral has led to the value of 0.15. This fact and additional advantages (hardness, stronger chemical bonds, lower diffusion coefficients) make Hg 1− x Zn x Te extremely interesting for ambient temperature IR photoresistors.
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