Auger-induced rearrangement of an ion-bombarded/SiO2 surface: Influence of electron energy

Abstract

Ion bombardment of SiO2 produces an understoichiometric surface layer containing a distribution of bonding states: SiO2, SiO x and free Si. Under the electron beam probe, a redistribution occurs, favoring the SiO2 and free Si states at the expense of SiO x , without loss of oxygen. The free Si yield exhibits the same energy dependence as the Auger yield of the Si LVV transition, thus pointing to Auger-induced bond rupture as the primary damaging event.