Abstract
Modifications of platinum silicides in the composition range between Pt 3Si and PtSi induced by argon ion beams were studied by angle-integrated Auger electron spectroscopy (AES). A platinum surface enrichment, which was stronger at low sputtering energies and in silicon-rich silicides, was found in the 1–5 keV ion energy range. In all silicides sputtering yield ratios Y Si/ Y Pt of about 2.9 and 2.1 were estimated for the 1 keV and 5 keV steady state regimes respectively. Simultaneous analysis of low and high energy platinum and silicon Auger lines indicated that the platinum enrichment extended over a range of a few tens of ångströms and was slightly higher at the surface than in the subsurface region. The platinum enrichment, its energy dependence and the in-depth graded composition of the altered layer are discussed in terms of silicon preferential sputtering, recoil implantation and surface segregation. Dynamic surface composition changes were also studied, and a model which accounts for the various “shapes” of the transient regimes and their dependence on the height of the steps in the sputtering energy is shown schematically. Shape analysis of the core-valence-valence Auger lines suggests that changes in the chemical bonding in platinum silicides are induced by ion bombardment so that enrichment with platinum results in the formation of compounds which are richer in platinum.
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