Abstract
The effect of annealing on sputter deposited thin-films NiCr/CuNi(Mn)/NiCr is studied by Auger electron depth profiling. The samples were annealed to maximum temperatures of 300°C to 550°C and investigated at ambient temperature. Auger transitions of Cu and Ni are separated by target factor analysis, principal component analysis and linear least squares fit to standard spectra. For the CuNi(Mn) layer in the as-received state AES results shows a Cu depletion caused by bombardment induced segregation. After annealing the measured Cu concentration has increased due to Ni diffusion to the interfaces. The NiCr layer is degraded with increasing annealing temperature due to formation of a chromium oxide and diffusion of Ni from the CuNi(Mn) layer. A sequence with nominal compositions near Cr 2Ni, CrNi and CrNi 2 is found. At the NiCr/CuNi(Mn) interface an interdiffusion zone phase Ni 0.6Cr 0.2Cu 0.2 is formed.
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