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Abstract
AbstractThe effect of annealing on the Auger electron depth profiles of electrodeposited amorphous Ni100‐yPy/Ni100‐xPx (15 < x < 32 at.%, y > x) thin film couples is studied at temperatures in the range 190–280 °C. Diffusion coefficients are evaluated by means of the Boltzmann–Matano method. The composition dependence of diffusion coefficients is explained by the role of free volumes in amorphous materials on interdiffusion.
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