Abstract
We propose a new experimental method using Auger electron spectroscopy for measuring electron attenuation lengths with a wedge-shaped surface of a multilayer system. The demonstration is performed using a ring-shaped pattern formed by ion sputtering. We have obtained attenuation lengths for electrons corresponding to As LMM (1228 eV) electrons through InGaP, to Si LMM (92 eV) and Si KLL (1619 eV) electrons through Rh and to Rh MNN (302 eV) electrons through SiO 2. These lengths are 35.7, 7.3, 16.1 and 41.7A˚, respectively.
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