Auger and X-ray photoelectron spectroscopic depth profiling techniques applied to ultra-thin titanium films

Abstract

Auger electron spectroscopy and X-ray photoelectron spectroscopy in combination with sputter profiling techniques were employed to study ultra-thin (100–500 Å) titanium films. The composition of the films was studied as a function of substrate, deposition temperature and heating. Particular attention was given to the interfacial region. The data indicated that the films were a mixture of titanium and TiO 2. At no point was a pure titanium phase present. At a deposition temperature of 450°C the interface was composed of titanium, TiO 2, silicon and SiO 2 when quartz was the substrate and titanium, TiO 2, aluminum and Al 2O 3 when sapphire was the substrate. The silicon and aluminum resulted from reduction of the substrate. When the deposition temperature was approximately 25°C the reductive interaction was minimized.