Abstract
The structure in the silicon and phosphorus Auger electron spectra (AES) for phosphorus evaporated onto a silicon substrate was studied. Similar satellite peaks were observed on the high-energy side of the silicon and phosphorus principal Auger transition. Measurements of the respective energy separations gave values lower than the silicon bulk plasmon energy. A study of the AES of phosphorus on copper did not show any reptition of the copper fine structure in the phosphorus Auger spectrum. Fine structure was observed on the silicon ionization loss peaks and was interpreted in terms of characteristic losses. These losses match those seen for the principal silicon Auger peak in size and energy. Electron binding energies, as determined from the ionization loss spectra, are reported.
Published Version
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