Abstract
Phosphorus redistribution during thermal oxidation of degenerately doped silicon was investigated using Auger electron spectroscopy and ellipsometry. Concentration profiles were determined with a combination of chemical and sputter etching techniques. A substantial phosphorus pileup was observed in the oxide in a thin layer near the ellipsometrically determined Si–SiO2 interface. Calibrated against standards of known concentration, this layer was found to contain ∼2×1021 phosphorus atoms/cm3, independent of the oxidation temperature between 850°C and 1000°C.
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