Abstract
Gold spreading on monocrystal substrates of GaSb during thermal annealing at temperatures ranging from 300 °C to 400 °C is studied. The spreading areas form a geometrical pattern related to the crystallographic structure of the GaSb substrates as observed under optical and electron microscopy. The peripheries of the spreading areas are along the 〈110〉 and 〈100〉 crystallographic directions of GaSb substrates. A rim of almost constant width along the periphery of the spreading area is observed and indicates that the gold spreading is through a surface diffusion mechanism before the reaction with the underlying substrate. Two areas with different morphologies are observed by the SEM back-scattered-electron-image (BEI) method. The compositions in different areas are detected by the SEM energy dispersion (ED) X-ray spectra, and the probable reactions during thermal anneals are suggested.
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