Abstract
An Au/In/Pd/Te/Pd ohmic contact scheme has been developed to n-GaSb (n/spl sime/10/sup 18/ cm/sup -3/). Annealed at 250 and 400/spl deg/C, this contact scheme exhibits excellent electrical properties (contact resistivity <10/sup -6/ /spl Omega/-cm/sup 2/) and good thermal stability. The surface and interface morphologies were investigated using a scanning electron microscope (SEM). The ohmic contact formation mechanism is also proposed.
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