Abstract
AlGaAs GaAs ridge waveguides with fundamental mode attenuation ≤ 1 dBcm −1 at a wavelength of 1.32 μm and channel widths of 4–4.5 μm are realized by ECR (Electron Cyclotron Resonance) plasma etching in BCl 3/Cl 2/Ar/N 2 chemistries. The choice of both plasma chemistry and initial mask scheme (single layer photoresist or trilevel resist) has a significant effect on the attenuation losses.
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