Abstract

Abstract Electron transport and emission is simulated by two Monte Carlo (MC) programs. The first version is based on elastic Mott cross sections and inelastic loss functions with full dispersion Δ E = ℏω ( q ), including electron impact and subsequent cascading processes. Surface effects like surface plasmons and the quantum mechanical surface transmittivity have been taken into account too. Especially for dielectric materials like SiO 2 and applied electric fields a second MC version is developed based on the electron scattering with acoustic and optical phonons, intra- and intervalley scattering and impact valence band ionization. A comparison of both versions results in a good agreement still in the energy region of several eV, but a predominance of the phonon-based second version is found for very low electron energies, e.g., for hot and ballistic electrons in dielectric materials.

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