Abstract
The kinetics of Si monomers, at submonolayer coverage, are measured using STM. Si monomers are observed in empty-state images acquired between room temperature and 115 C. The monomers become trapped at the ends of rebonded-SB type dimer rows, while substrate defects and SA type steps act as reflection barriers. At elevated temperatures, monomers thermally escape from the traps and diffuse one-dimensionally along the substrate dimer row until they find another unoccupied trap or return to their original trap. From the rate at which the monomers escape from the traps, the binding activation barrier at isolated traps is estimated to be ~ 1.0 eV. A slightly lower barrier exists for monomers to hop between traps located at the ends of neighboring dimer rows -- a process facilitating diffusion along segments of the SB type steps.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
