Atomistic structure of the Cu(1 1 1)/α-Al 2O 3(0 0 0 1) interface in terms of interatomic potentials fitted to ab initio results

Abstract

We propose an atomistic model to describe the copper/sapphire interface by means of simple interatomic potentials involving only a few fitting parameters. Successful results are achieved when the copper atoms in the monatomic layer closest to the interface have properties different from the bulk. This layer is to accommodate the ionic/covalent bonding in the ceramics to the metallic bonding in copper. For an oxygen terminated interface, we fit the parameters of the potentials to the results of a rigid tensile test (explained in the text) simulated from first principles. The results of atomic relaxation near the interface are shown to be consistent with ab initio and experimental results available in the literature. Calculations reveal highly interesting relaxation dynamics near the interface. In the early stage of relaxation, a periodic network of partial misfit dislocations is formed, which later transforms into an irregular network due to the instability of the layer of copper atoms atop the oxygen atoms. This explains the interface incoherency observed in high-resolution electron microscopy. Calculations based on the FK model reproduce this effect.